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Show More. No Downloads. Views Total views. Actions Shares. Embeds 0 No embeds. No notes for slide. Power semiconductor devices 1. Characteristics of several commercial power rectifier diodes Power Electronics Power Semiconductor Devices9 The equivalent circuit and construction of thyristor Power Electronics Power Semiconductor Devices30 Slower than IGBT.

Slower than MCT. Difficult to drive. Easy to drive. Still emerging devices? Majority carrier devices, including the MOSFET and Schottky diode, exhibit very fast switching times, controlled essentially by the charging of the device capacitances.

Moore's Law and Moving Beyond Silicon: The Rise of Diamond Technology

However, the forward voltage drops of these devices increases quickly with increasing breakdown voltage. Minority carrier devices, including the BJT, IGBT, and thyristor family, can exhibit high breakdown voltages with relatively low forward voltage drop. However, the switching times of these devices are longer, and are controlled by the times needed to insert or remove stored minority charge. Energy is lost during switching transitions, due to a variety of mechanisms. The resulting average power loss, or switching loss, is equal to this energy loss multiplied by the switching frequency.

IGBT Generation 7

Switching loss imposes an upper limit on the switching frequencies of practical converters. You just clipped your first slide!